Influence of Sputtering Power and Nitrogen Gas Flow Rate on Properties of Titanium Aluminum Nitride Thin Film Deposited by Reactive DC Magnetron Sputtering

Authors

  • Pimchanok Reakaukot คณะวิทยาศาสตร์และเทคโนโลยี มหาวิทยาลัยธรรมศาสตร์
  • Witthawat Wongpisan
  • Kirati Waree
  • Montri Aiempanakit
  • Kamon Aiempanakit

Abstract

TiAlN thin films were deposited on silicon substrate by reactive DC magnetron sputtering. Influences of sputtering power and nitrogen gas flow rate on structural and mechanical properties of TiAlN thin film were investigated. The crystal structure, morphology and surface roughness were studied by XRD, FE-SEM and AFM, respectively. Moreover, elemental composition and hardness of TiAlN thin film were analized by EDX and nanoindentation, respectively. The result showed that crystal structure was found and morphology was promoted texture with triangle when increasing nitrogen gas flow rate from 0.6 to 1.0 sccm. Increasing sputtering power at nitrogen gas flow rate of 1.0 sccm exhibited decrease crystallinity, crystallite size, lattice constant and surface roughness. The best condition of TiAlN thin film was TAN2 due to elemental composition ratio of (Ti+Al):N about 50:50 showed highest hardness of 13.26 GPa. The obtained hardness of TiAlN thin film was similar to TiN film because elemental composition of Ti more than Al of 2.25 times.  Keywords : TiAlN ;  sputtering ; sputtering power ; elemental composition ;  hardness

Author Biography

Pimchanok Reakaukot, คณะวิทยาศาสตร์และเทคโนโลยี มหาวิทยาลัยธรรมศาสตร์

        

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Published

2022-02-18