Influence of the Ion Flux and the Bias Voltage on Microstructure of Hydrogenated Amorphous Carbon Films Deposited by DC Magnetron Sputtering

Authors

  • Nopphon Saowiang Mahasarakham university
  • Artit Chingsungnoen
  • Phitsanu Poolcharuansin

Abstract

This research is concerned with the deposition process for hydrogenated amorphous carbon films (a-C:H) by DC magnetron sputtering in He/C2H2 gas mixtures. More specifically, the influence of ion flux and substrate bias voltage on the microstructure of a-C:H films has been investigated. It was shown from the Langmuir probe that ion flux at the substrate position is in the range of 1018-1019 m-2s-1 for the given process conditions. Furthermore, the flux of ions is proportional to the discharge power, however, nearly independent from the substrate bias voltage.                    The microstructure of a-C:H films has been investigated using Raman spectroscopy. It was found that increasing the amount of ion flux gives rise to an increase sp2/sp3 ratio indicating a larger grain size of the graphite structure in the a-C:H films. However, the substrate bias over -200 V results in a dramatic decrease of sp2/sp3 ratio presenting a higher diamond-like structure in the deposited films. Keywords: a-C:H films, DC magnetron sputtering, substrate bias, Ion flux, microstructure

Author Biography

Nopphon Saowiang, Mahasarakham university

Master's degree students

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Published

2019-07-05