Structural and Oxidation behavior of TiN Thin Films Deposited Using Reactive DC Magnetron Sputtering Technique

Authors

  • Adisorn Buranawong Department of Physics, Faculty of Science, Burapha University
  • Amonrat Khambun Program in Physics, Faculty of Science and Technology, Bansomdejchaopraya Rajabhat University
  • Siriwat Alaksanasuwan Science Department, Faculty of Science and Technology, Phranakhon Si Ayutthaya Rajabhat University, Phranakhon Si Ayutthaya
  • Nirun Witit-anun Department of Physics, Faculty of Science, Burapha University

Abstract

The structural and oxidation behavior of TiN thin films, grown by reactive DC magnetron sputtering technique was studied. To evaluate crystal structure and oxidation behavior of coated samples, annealing with the different temperature in the range of 500 - 1000 °C were conducted. After annealing, the films were characterized using X-ray Diffractometer (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and Field-Emission Scanning Electron Microscope (FE-SEM). The XRD resulted revealed that the formation oxidation which TiO2 rutile phase diffraction peak appear from 600 °C and the intensity of oxide increased gradually with temperature. The aggregation of grain increased with temperature were observed from FE-SEM. The cross-sectional results showed that the thin dense oxide over layer was present at 500 oC and the oxide thickness increased gradually with temperature. Meanwhile, underneath TiN grain grew above 500 oC and become more void structure after annealing at 700 °C. The oxygen content was found at 500 oC and the evolution of Ti, N and O with different elements compositions at various annealing temperatures were investigated from EDS technique. The oxidation rate was found to depend strongly on annealing temperature. The oxidation activation energy of 44.54 kJ/mol was obtained. Keywords :  oxidation, TiN, sputtering

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2020-01-15

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