Preparation and Characterization of Titanium Chromium Nitride Thin Film Deposited by Reactive DC Magnetron Co-Sputtering Method

Authors

  • Adisorn Buranawong Department of Physics, Faculty of Science, Burapha University
  • Wanlapaporn Phimjong Department of Physics, Faculty of Science, Burapha University
  • Siriwat Alaksanasuwan Department of Science, Faculty of Science and Technology, Phranakhon Si Ayutthaya Rajabhat University
  • Nirun Witit-Anun Department of Physics, Faculty of Science, Burapha University

Abstract

Titanium Chromium Nitride (TiCrN) thin films were deposited on Si substrate by reactive DC magnetron co-sputtering method in this research to study the effect of N2 gas flow rates on the crystal structure, microstructure, thickness and elemental composition. The films were characterized by XRD, FE-SEM and EDS techniques, respectively. The results showed that TiCrN structure of the films was obtained. The crystal structure of the as–deposited films was varied with N2 gas flow rates. The crystal size and lattice constant were in the range of 11.35 - 22.35 nm and 4.133 – 4.197 Å, respectively. The columnar structure was investigated from the cross-section analysis. Moreover, the microstructure, thickness and elemental compositions of the as-deposited films were stilled changed with the N2 gas flow rates. Keywords :  thin film, TiCrN, N2 gas flow rates, reactive co-sputtering

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2018-10-03

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